TPN2010FNH,L1Q - MOSFET N-CH 250V 5.6A 8TSON

Fabricant Nimewo Pati

TPN2010FNH,L1Q

Entèn Nimewo Pati

ABC-TPN2010FNH,L1Q

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 250V 5.6A 8TSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1027705 Pieces

referans pri

~~USD 0.3185~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TPN2010FNH,L1Q nan stock pou vann.

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Espesifikasyon pou TPN2010FNH,L1Q

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPN2010FNH,L1Q

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 250V 5.6A 8TSON

Seri : U-MOSVIII-H

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 250V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.6A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 198 mOhm @ 2.8A, 10V

Vgs (th) (Max) @ Id : 4V @ 200µA

Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 600pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta), 39W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPN2 , TPN2010

dokiman pou TPN2010FNH,L1Q

Fich : TPN2010FNH,L1Q.pdf

pwodwi ki gen rapò pou TPN2010FNH,L1Q Toshiba Semiconductor and Storage

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