FDME820NZT - MOSFET N-CH 20V 9A MICROFET 1.6

Fabricant Nimewo Pati

FDME820NZT

Entèn Nimewo Pati

ABC-FDME820NZT

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 20V 9A MICROFET 1.6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2050391 Pieces

referans pri

~~USD 0.15964~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDME820NZT nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FDME820NZT

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDME820NZT

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 20V 9A MICROFET 1.6

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 18 mOhm @ 9A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 8.5nC @ 4.5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 865pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : MicroFet 1.6x1.6 Thin

Pake / Ka : 6-PowerUFDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDM , FDME8

dokiman pou FDME820NZT

Fich : FDME820NZT.pdf

pwodwi ki gen rapò pou FDME820NZT ON Semiconductor

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