NDD60N745U1-1G - MOSFET N-CH 600V 6.8A IPAK-4

Fabricant Nimewo Pati

NDD60N745U1-1G

Entèn Nimewo Pati

ABC-NDD60N745U1-1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 6.8A IPAK-4

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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87264 Pieces

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Espesifikasyon pou NDD60N745U1-1G

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Nimewo pati : NDD60N745U1-1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 600V 6.8A IPAK-4

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.6A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 745 mOhm @ 3.25A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 440pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 84W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I-PAK

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NDD6 , NDD60N7

dokiman pou NDD60N745U1-1G

Fich : NDD60N745U1-1G.pdf

pwodwi ki gen rapò pou NDD60N745U1-1G ON Semiconductor

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