NTJD1155LT1G - MOSFET N/P-CH 8V 1.3A SOT-363

Fabricant Nimewo Pati

NTJD1155LT1G

Entèn Nimewo Pati

ABC-NTJD1155LT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N/P-CH 8V 1.3A SOT-363

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

5114445 Pieces

referans pri

~~USD 0.064~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen NTJD1155LT1G nan stock pou vann.

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Espesifikasyon pou NTJD1155LT1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NTJD1155LT1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N/P-CH 8V 1.3A SOT-363

Seri : -

Estati Pati : Active

FET Kalite : N and P-Channel

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 8V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.3A

RD sou (Max) @ Id, Vgs : 175 mOhm @ 1.2A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : -

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : 400mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 6-TSSOP, SC-88, SOT-363

Pake Aparèy Founisè : SC-88/SC70-6/SOT-363

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NTJD , NTJD11

dokiman pou NTJD1155LT1G

Fich : NTJD1155LT1G.pdf

pwodwi ki gen rapò pou NTJD1155LT1G ON Semiconductor

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