R6076MNZ1C9 - MOSFET N-CHANNEL 600V 76A TO247

Fabricant Nimewo Pati

R6076MNZ1C9

Entèn Nimewo Pati

ABC-R6076MNZ1C9

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CHANNEL 600V 76A TO247

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

77376 Pieces

referans pri

~~USD 7.855~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen R6076MNZ1C9 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou R6076MNZ1C9

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : R6076MNZ1C9

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CHANNEL 600V 76A TO247

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 76A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 55 mOhm @ 38A, 10V

Vgs (th) (Max) @ Id : 5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 115nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 7000pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 740W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : R60 , R6076

dokiman pou R6076MNZ1C9

Fich : R6076MNZ1C9.pdf

pwodwi ki gen rapò pou R6076MNZ1C9 Rohm Semiconductor

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