IRFB31N20DPBF - MOSFET N-CH 200V 31A TO-220AB

Fabricant Nimewo Pati

IRFB31N20DPBF

Entèn Nimewo Pati

ABC-IRFB31N20DPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 200V 31A TO-220AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

272762 Pieces

referans pri

~~USD 1.2~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IRFB31N20DPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRFB31N20DPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFB31N20DPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 200V 31A TO-220AB

Seri : HEXFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 31A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 82 mOhm @ 18A, 10V

Vgs (th) (Max) @ Id : 5.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 107nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 2370pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.1W (Ta), 200W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220AB

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRFB , IRFB31

dokiman pou IRFB31N20DPBF

Fich : IRFB31N20DPBF.pdf

pwodwi ki gen rapò pou IRFB31N20DPBF Infineon Technologies

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