IXTD4N80P-3J - MOSFET N-CH 800

Fabricant Nimewo Pati

IXTD4N80P-3J

Entèn Nimewo Pati

ABC-IXTD4N80P-3J

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 800

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

42614 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IXTD4N80P-3J nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXTD4N80P-3J

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXTD4N80P-3J

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 800

Seri : PolarHV™

Estati Pati : Last Time Buy

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.6A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3.4 Ohm @ 1.8A, 10V

Vgs (th) (Max) @ Id : 5.5V @ 100µA

Chaje Gate (Qg) (Max) @ Vgs : 14.2nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 750pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 100W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : Die

Pake / Ka : Die

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXTD , IXTD4N

dokiman pou IXTD4N80P-3J

Fich : IXTD4N80P-3J.pdf

pwodwi ki gen rapò pou IXTD4N80P-3J IXYS

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