VQ1001P-E3 - MOSFET 4N-CH 30V 0.83A 14DIP

Fabricant Nimewo Pati

VQ1001P-E3

Entèn Nimewo Pati

ABC-VQ1001P-E3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 4N-CH 30V 0.83A 14DIP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

52767 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen VQ1001P-E3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou VQ1001P-E3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : VQ1001P-E3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 4N-CH 30V 0.83A 14DIP

Seri : -

Estati Pati : Obsolete

FET Kalite : 4 N-Channel

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 830mA

RD sou (Max) @ Id, Vgs : 1.75 Ohm @ 200mA, 5V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : -

Antre kapasite (Ciss) (Max) @ Vds : 110pF @ 15V

Pouvwa - Max : 2W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake / Ka : -

Pake Aparèy Founisè : 14-DIP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : VQ1 , VQ100

dokiman pou VQ1001P-E3

Fich : VQ1001P-E3.pdf

pwodwi ki gen rapò pou VQ1001P-E3 Vishay Siliconix

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