BYV26E-TR - DIODE AVALANCHE 1000V 1A SOD57

Fabricant Nimewo Pati

BYV26E-TR

Entèn Nimewo Pati

ABC-BYV26E-TR

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE AVALANCHE 1000V 1A SOD57

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3117366 Pieces

referans pri

~~USD 0.105~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen BYV26E-TR nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BYV26E-TR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BYV26E-TR

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE AVALANCHE 1000V 1A SOD57

Seri : -

Estati Pati : Active

Kalite dyòd : Avalanche

Voltage - DC Ranvèse (Vr) (Max) : 1000V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 2.5V @ 1A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 75ns

Kouran - Fèy Reverse @ Vr : 5µA @ 1000V

Kapasite @ Vr, F : -

Mounting Kalite : Through Hole

Pake / Ka : SOD-57, Axial

Pake Aparèy Founisè : SOD-57

Operating Tanperati - Junction : -55°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BYV , BYV2

dokiman pou BYV26E-TR

Fich : BYV26E-TR.pdf

pwodwi ki gen rapò pou BYV26E-TR Vishay Semiconductor Diodes Division

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