RN1961FE(TE85L,F) - TRANS 2NPN PREBIAS 0.1W ES6

Fabricant Nimewo Pati

RN1961FE(TE85L,F)

Entèn Nimewo Pati

ABC-RN1961FE(TE85L,F)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

TRANS 2NPN PREBIAS 0.1W ES6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

65600 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen RN1961FE(TE85L,F) nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou RN1961FE(TE85L,F)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RN1961FE(TE85L,F)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : TRANS 2NPN PREBIAS 0.1W ES6

Seri : -

Estati Pati : Obsolete

Kalite tranzistò : 2 NPN - Pre-Biased (Dual)

Kouran - Pèseptè (Ic) (Max) : 100mA

Voltage - Pèseptè ki emèt deba (Max) : 50V

Rezistans - Sèvi (R1) : 4.7 kOhms

Rezistans - Sèvi ak emeteur (R2) : 4.7 kOhms

DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V

Vce saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Kouran - Cutoff Pèseptè (Max) : 100nA (ICBO)

Frekans - Tranzisyon : 250MHz

Pouvwa - Max : 100mW

Mounting Kalite : Surface Mount

Pake / Ka : SOT-563, SOT-666

Pake Aparèy Founisè : ES6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RN196 , RN1961FE

dokiman pou RN1961FE(TE85L,F)

Fich : RN1961FE(TE85L,F).pdf

pwodwi ki gen rapò pou RN1961FE(TE85L,F) Toshiba Semiconductor and Storage

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