EPC8009 - GANFET TRANS 65V 2.7A BUMPED DIE

Fabricant Nimewo Pati

EPC8009

Entèn Nimewo Pati

ABC-EPC8009

Fabricant

EPC

Kout Deskripsyon

GANFET TRANS 65V 2.7A BUMPED DIE

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

259770 Pieces

referans pri

~~USD 1.26~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen EPC8009 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou EPC8009

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : EPC8009

Fabricant : EPC

Deskripsyon : GANFET TRANS 65V 2.7A BUMPED DIE

Seri : eGaN®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : GaNFET (Gallium Nitride)

Drenaj nan Voltage Sous (Vdss) : 65V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.7A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V

RD sou (Max) @ Id, Vgs : 130 mOhm @ 500mA, 5V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 0.45nC @ 5V

Vgs (Max) : +6V, -4V

Antre kapasite (Ciss) (Max) @ Vds : 52pF @ 32.5V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : -

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : Die

Pake / Ka : Die

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : EP , EPC

dokiman pou EPC8009

Fich : EPC8009.pdf

pwodwi ki gen rapò pou EPC8009 EPC

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