SIZ322DT-T1-GE3 - MOSFET 2 N-CH 25V 30A 8-POWER33

Fabricant Nimewo Pati

SIZ322DT-T1-GE3

Entèn Nimewo Pati

ABC-SIZ322DT-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2 N-CH 25V 30A 8-POWER33

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1767598 Pieces

referans pri

~~USD 0.18518~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SIZ322DT-T1-GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SIZ322DT-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIZ322DT-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2 N-CH 25V 30A 8-POWER33

Seri : TrenchFET® Gen IV

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 25V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)

RD sou (Max) @ Id, Vgs : 6.35 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 20.1nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 950pF @ 12.5V

Pouvwa - Max : 16.7W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerWDFN

Pake Aparèy Founisè : 8-Power33 (3x3)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIZ32 , SIZ322D

dokiman pou SIZ322DT-T1-GE3

Fich : SIZ322DT-T1-GE3.pdf

pwodwi ki gen rapò pou SIZ322DT-T1-GE3 Vishay Siliconix

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