STQ1HNK60R-AP - MOSFET N-CH 600V 400MA TO-92

Fabricant Nimewo Pati

STQ1HNK60R-AP

Entèn Nimewo Pati

ABC-STQ1HNK60R-AP

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET N-CH 600V 400MA TO-92

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2677934 Pieces

referans pri

~~USD 0.12223~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen STQ1HNK60R-AP nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou STQ1HNK60R-AP

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STQ1HNK60R-AP

Fabricant : STMicroelectronics

Deskripsyon : MOSFET N-CH 600V 400MA TO-92

Seri : SuperMESH™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 400mA (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 8.5 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 3.7V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 156pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-92-3

Pake / Ka : TO-226-3, TO-92-3 (TO-226AA)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STQ1 , STQ1HN

dokiman pou STQ1HNK60R-AP

Fich : STQ1HNK60R-AP.pdf

pwodwi ki gen rapò pou STQ1HNK60R-AP STMicroelectronics

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