RQ3G150GNTB - MOSFET N-CHANNEL 40V 39A 8HSMT

Fabricant Nimewo Pati

RQ3G150GNTB

Entèn Nimewo Pati

ABC-RQ3G150GNTB

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CHANNEL 40V 39A 8HSMT

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1446795 Pieces

referans pri

~~USD 0.22624~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen RQ3G150GNTB nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou RQ3G150GNTB

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RQ3G150GNTB

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CHANNEL 40V 39A 8HSMT

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 39A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 7.2 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 11.6nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1450pF @ 20V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 20W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-HSMT (3.2x3)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RQ3 , RQ3G1

dokiman pou RQ3G150GNTB

Fich : RQ3G150GNTB.pdf

pwodwi ki gen rapò pou RQ3G150GNTB Rohm Semiconductor

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