PSMN6R0-25YLB,115 - MOSFET N-CH 25V LFPAK

Fabricant Nimewo Pati

PSMN6R0-25YLB,115

Entèn Nimewo Pati

ABC-PSMN6R0-25YLB,115

Fabricant

Nexperia USA Inc.

Kout Deskripsyon

MOSFET N-CH 25V LFPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2329124 Pieces

referans pri

~~USD 0.140535~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen PSMN6R0-25YLB,115 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PSMN6R0-25YLB,115

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PSMN6R0-25YLB,115

Fabricant : Nexperia USA Inc.

Deskripsyon : MOSFET N-CH 25V LFPAK

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 25V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 73A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 6.1 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 1.95V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 19.3nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1099pF @ 12V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 58W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : LFPAK56, Power-SO8

Pake / Ka : SC-100, SOT-669

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PSMN6 , PSMN6R0-

dokiman pou PSMN6R0-25YLB,115

Fich : PSMN6R0-25YLB,115.pdf

pwodwi ki gen rapò pou PSMN6R0-25YLB,115 Nexperia USA Inc.

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