FDS5690-NBBM009A - MOSFET N-CH 60V 7A 8SOIC

Fabricant Nimewo Pati

FDS5690-NBBM009A

Entèn Nimewo Pati

ABC-FDS5690-NBBM009A

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 60V 7A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

80320 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDS5690-NBBM009A nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FDS5690-NBBM009A

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDS5690-NBBM009A

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 60V 7A 8SOIC

Seri : PowerTrench®

Estati Pati : Discontinued at Digi-Key

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 28 mOhm @ 7A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 32nC @ 10V

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : 1107pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SOIC

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDS56 , FDS5690-

dokiman pou FDS5690-NBBM009A

Fich : FDS5690-NBBM009A.pdf

pwodwi ki gen rapò pou FDS5690-NBBM009A ON Semiconductor

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