DGD2118S8-13 - IC GATE DRVR HIGH-SIDE 8SO

Fabricant Nimewo Pati

DGD2118S8-13

Entèn Nimewo Pati

ABC-DGD2118S8-13

Fabricant

Diodes Incorporated

Kout Deskripsyon

IC GATE DRVR HIGH-SIDE 8SO

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

652211 Pieces

referans pri

~~USD 0.558~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen DGD2118S8-13 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou DGD2118S8-13

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DGD2118S8-13

Fabricant : Diodes Incorporated

Deskripsyon : IC GATE DRVR HIGH-SIDE 8SO

Seri : -

Estati Pati : Active

Kondwi konte genyen : High-Side

Kalite Chèn : Single

Kantite Chofè yo : 1

Kalite Gate : IGBT, N-Channel MOSFET

Voltage - Pwovizyon pou : 10V ~ 20V

Vòltaj lojik - VIL, VIH : 6V, 9.5V

Kouran - Peak Sòti (Sous, Lavabo) : 290mA, 600mA

Kalite Antre : Non-Inverting

Segondè Voltage Side - Max (Bootstrap) : 600V

Rise / Fall Time (Tip) : 75ns, 35ns

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SO

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DGD2 , DGD211

dokiman pou DGD2118S8-13

Fich : DGD2118S8-13.pdf

pwodwi ki gen rapò pou DGD2118S8-13 Diodes Incorporated

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