GP1M010A080FH - MOSFET N-CH 800V 9.5A TO220F

Fabricant Nimewo Pati

GP1M010A080FH

Entèn Nimewo Pati

ABC-GP1M010A080FH

Fabricant

Global Power Technologies Group

Kout Deskripsyon

MOSFET N-CH 800V 9.5A TO220F

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

84608 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen GP1M010A080FH nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou GP1M010A080FH

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : GP1M010A080FH

Fabricant : Global Power Technologies Group

Deskripsyon : MOSFET N-CH 800V 9.5A TO220F

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.05 Ohm @ 4.75A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 53nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 2336pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 48W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220F

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : GP1M , GP1M01

dokiman pou GP1M010A080FH

Fich : GP1M010A080FH.pdf

pwodwi ki gen rapò pou GP1M010A080FH Global Power Technologies Group

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