TPC8038-H(TE12L,Q) - MOSFET N-CH 30V 12A SOP8 2-6J1B

Fabricant Nimewo Pati

TPC8038-H(TE12L,Q)

Entèn Nimewo Pati

ABC-TPC8038-H(TE12L,Q)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 30V 12A SOP8 2-6J1B

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

43860 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TPC8038-H(TE12L,Q) nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TPC8038-H(TE12L,Q)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPC8038-H(TE12L,Q)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 30V 12A SOP8 2-6J1B

Seri : U-MOSV-H

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 11.4 mOhm @ 6A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : 2150pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : -

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SOP (5.5x6.0)

Pake / Ka : 8-SOIC (0.173", 4.40mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPC803 , TPC8038-H

dokiman pou TPC8038-H(TE12L,Q)

Fich : TPC8038-H(TE12L,Q).pdf

pwodwi ki gen rapò pou TPC8038-H(TE12L,Q) Toshiba Semiconductor and Storage

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