PHD18NQ10T,118 - MOSFET N-CH 100V 18A DPAK

Fabricant Nimewo Pati

PHD18NQ10T,118

Entèn Nimewo Pati

ABC-PHD18NQ10T,118

Fabricant

NXP USA Inc.

Kout Deskripsyon

MOSFET N-CH 100V 18A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

45721 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen PHD18NQ10T,118 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PHD18NQ10T,118

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PHD18NQ10T,118

Fabricant : NXP USA Inc.

Deskripsyon : MOSFET N-CH 100V 18A DPAK

Seri : TrenchMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 90 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 633pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 79W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DPAK

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PHD1 , PHD18NQ

dokiman pou PHD18NQ10T,118

Fich : PHD18NQ10T,118.pdf

pwodwi ki gen rapò pou PHD18NQ10T,118 NXP USA Inc.

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