NTLJD3115PT1G - MOSFET 2P-CH 20V 2.3A 6-WDFN

Fabricant Nimewo Pati

NTLJD3115PT1G

Entèn Nimewo Pati

ABC-NTLJD3115PT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET 2P-CH 20V 2.3A 6-WDFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3028116 Pieces

referans pri

~~USD 0.108095~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen NTLJD3115PT1G nan stock pou vann.

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Espesifikasyon pou NTLJD3115PT1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NTLJD3115PT1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET 2P-CH 20V 2.3A 6-WDFN

Seri : -

Estati Pati : Active

FET Kalite : 2 P-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.3A

RD sou (Max) @ Id, Vgs : 100 mOhm @ 2A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 6.2nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 531pF @ 10V

Pouvwa - Max : 710mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 6-WDFN Exposed Pad

Pake Aparèy Founisè : 6-WDFN (2x2)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NTLJ , NTLJD3

dokiman pou NTLJD3115PT1G

Fich : NTLJD3115PT1G.pdf

pwodwi ki gen rapò pou NTLJD3115PT1G ON Semiconductor

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