SI5856DC-T1-E3 - MOSFET N-CH 20V 4.4A 1206-8

Fabricant Nimewo Pati

SI5856DC-T1-E3

Entèn Nimewo Pati

ABC-SI5856DC-T1-E3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 20V 4.4A 1206-8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

28815 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SI5856DC-T1-E3 nan stock pou vann.

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Espesifikasyon pou SI5856DC-T1-E3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI5856DC-T1-E3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 20V 4.4A 1206-8

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.4A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 40 mOhm @ 4.4A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 7.5nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : Schottky Diode (Isolated)

Disipasyon Pouvwa (Max) : 1.1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 1206-8 ChipFET™

Pake / Ka : 8-SMD, Flat Lead

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI58 , SI5856D

dokiman pou SI5856DC-T1-E3

Fich : SI5856DC-T1-E3.pdf

pwodwi ki gen rapò pou SI5856DC-T1-E3 Vishay Siliconix

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