FDS6609A - MOSFET P-CH 30V 6.3A 8SOIC

Fabricant Nimewo Pati

FDS6609A

Entèn Nimewo Pati

ABC-FDS6609A

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 30V 6.3A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

110736 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDS6609A nan stock pou vann.

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Espesifikasyon pou FDS6609A

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDS6609A

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 30V 6.3A 8SOIC

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 32 mOhm @ 7A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 29nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 930pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SOIC

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDS6

dokiman pou FDS6609A

Fich : FDS6609A.pdf

pwodwi ki gen rapò pou FDS6609A ON Semiconductor

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