RD3H080SPFRATL - RD3H080SPFRA IS A POWER MOSFET W

Fabricant Nimewo Pati

RD3H080SPFRATL

Entèn Nimewo Pati

ABC-RD3H080SPFRATL

Fabricant

Rohm Semiconductor

Kout Deskripsyon

RD3H080SPFRA IS A POWER MOSFET W

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1181418 Pieces

referans pri

~~USD 0.27706~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen RD3H080SPFRATL nan stock pou vann.

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Espesifikasyon pou RD3H080SPFRATL

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RD3H080SPFRATL

Fabricant : Rohm Semiconductor

Deskripsyon : RD3H080SPFRA IS A POWER MOSFET W

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 45V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V

RD sou (Max) @ Id, Vgs : 91 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 3V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 9nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1000pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 15W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RD3H , RD3H080

dokiman pou RD3H080SPFRATL

Fich : RD3H080SPFRATL.pdf

pwodwi ki gen rapò pou RD3H080SPFRATL Rohm Semiconductor

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