TSM110NB04CR RLG - MOSFET SINGLE N-CHANNEL TRENCH

Fabricant Nimewo Pati

TSM110NB04CR RLG

Entèn Nimewo Pati

ABC-TSM110NB04CR RLG

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

MOSFET SINGLE N-CHANNEL TRENCH

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2401504 Pieces

referans pri

~~USD 0.1363~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TSM110NB04CR RLG nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TSM110NB04CR RLG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TSM110NB04CR RLG

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : MOSFET SINGLE N-CHANNEL TRENCH

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta), 54A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 11 mOhm @ 12A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 23nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1443pF @ 20V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.1W (Ta), 68W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-PDFN (5x6)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TSM11 , TSM110NB

dokiman pou TSM110NB04CR RLG

Fich : TSM110NB04CR RLG.pdf

pwodwi ki gen rapò pou TSM110NB04CR RLG Taiwan Semiconductor Corporation

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