SCT2H12NZGC11 - MOSFET N-CH 1700V 3.7A

Fabricant Nimewo Pati

SCT2H12NZGC11

Entèn Nimewo Pati

ABC-SCT2H12NZGC11

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 1700V 3.7A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

119696 Pieces

referans pri

~~USD 3.125~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SCT2H12NZGC11 nan stock pou vann.

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Espesifikasyon pou SCT2H12NZGC11

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SCT2H12NZGC11

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 1700V 3.7A

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : SiCFET (Silicon Carbide)

Drenaj nan Voltage Sous (Vdss) : 1700V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.7A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 18V

RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 1.1A, 18V

Vgs (th) (Max) @ Id : 4V @ 900µA

Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 18V

Vgs (Max) : +22V, -6V

Antre kapasite (Ciss) (Max) @ Vds : 184pF @ 800V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 35W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-3PFM

Pake / Ka : TO-3PFM, SC-93-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SCT2 , SCT2H1

dokiman pou SCT2H12NZGC11

Fich : SCT2H12NZGC11.pdf

pwodwi ki gen rapò pou SCT2H12NZGC11 Rohm Semiconductor

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