STS19N3LLH6 - MOSFET N-CH 30V 19A 8SOIC

Fabricant Nimewo Pati

STS19N3LLH6

Entèn Nimewo Pati

ABC-STS19N3LLH6

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET N-CH 30V 19A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

99408 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen STS19N3LLH6 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou STS19N3LLH6

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STS19N3LLH6

Fabricant : STMicroelectronics

Deskripsyon : MOSFET N-CH 30V 19A 8SOIC

Seri : DeepGATE™, STripFET™ VI

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 5.6 mOhm @ 9.5A, 10V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 15V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1690pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.7W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SO

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STS , STS19

dokiman pou STS19N3LLH6

Fich : STS19N3LLH6.pdf

pwodwi ki gen rapò pou STS19N3LLH6 STMicroelectronics

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