C3M0065100J-TR - 1000V 65 MOHM G3 SIC MOSFET

Fabricant Nimewo Pati

C3M0065100J-TR

Entèn Nimewo Pati

ABC-C3M0065100J-TR

Fabricant

Cree/Wolfspeed

Kout Deskripsyon

1000V 65 MOHM G3 SIC MOSFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

65916 Pieces

referans pri

~~USD 6.384~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen C3M0065100J-TR nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou C3M0065100J-TR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : C3M0065100J-TR

Fabricant : Cree/Wolfspeed

Deskripsyon : 1000V 65 MOHM G3 SIC MOSFET

Seri : C3M™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : SiC (Silicon Carbide Junction Transistor)

Drenaj nan Voltage Sous (Vdss) : 1000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 15V

RD sou (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V

Vgs (th) (Max) @ Id : 3.5V @ 5mA

Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 15V

Vgs (Max) : +15V, -4V

Antre kapasite (Ciss) (Max) @ Vds : 660pF @ 600V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 113.5W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-263-7

Pake / Ka : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : C3M0 , C3M0065

dokiman pou C3M0065100J-TR

Fich : C3M0065100J-TR.pdf

pwodwi ki gen rapò pou C3M0065100J-TR Cree/Wolfspeed

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