SI1417EDH-T1-GE3 - MOSFET P-CH 12V 2.7A SC-70-6

Fabricant Nimewo Pati

SI1417EDH-T1-GE3

Entèn Nimewo Pati

ABC-SI1417EDH-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET P-CH 12V 2.7A SC-70-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

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Espesifikasyon pou SI1417EDH-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI1417EDH-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET P-CH 12V 2.7A SC-70-6

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.7A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 85 mOhm @ 3.3A, 4.5V

Vgs (th) (Max) @ Id : 450mV @ 250µA (Min)

Chaje Gate (Qg) (Max) @ Vgs : 8nC @ 4.5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SC-70-6 (SOT-363)

Pake / Ka : 6-TSSOP, SC-88, SOT-363

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI141 , SI1417ED

dokiman pou SI1417EDH-T1-GE3

Fich : SI1417EDH-T1-GE3.pdf

pwodwi ki gen rapò pou SI1417EDH-T1-GE3 Vishay Siliconix

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