RCD075N19TL - MOSFET N-CH 190V 7.5A CPT3

Fabricant Nimewo Pati

RCD075N19TL

Entèn Nimewo Pati

ABC-RCD075N19TL

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 190V 7.5A CPT3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1670018 Pieces

referans pri

~~USD 0.196~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen RCD075N19TL nan stock pou vann.

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Espesifikasyon pou RCD075N19TL

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RCD075N19TL

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 190V 7.5A CPT3

Seri : -

Estati Pati : Not For New Designs

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 190V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V

RD sou (Max) @ Id, Vgs : 336 mOhm @ 3.8A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 850mW (Ta), 20W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : CPT3

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RCD , RCD07

dokiman pou RCD075N19TL

Fich : RCD075N19TL.pdf

pwodwi ki gen rapò pou RCD075N19TL Rohm Semiconductor

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