RQ1C065UNTR - MOSFET N-CH 20V 6.5A TSMT8

Fabricant Nimewo Pati

RQ1C065UNTR

Entèn Nimewo Pati

ABC-RQ1C065UNTR

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 20V 6.5A TSMT8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3325623 Pieces

referans pri

~~USD 0.098425~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen RQ1C065UNTR nan stock pou vann.

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Espesifikasyon pou RQ1C065UNTR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RQ1C065UNTR

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 20V 6.5A TSMT8

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V

RD sou (Max) @ Id, Vgs : 22 mOhm @ 6.5A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 4.5V

Vgs (Max) : ±10V

Antre kapasite (Ciss) (Max) @ Vds : 870pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TSMT8

Pake / Ka : 8-SMD, Flat Lead

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RQ1 , RQ1C0

dokiman pou RQ1C065UNTR

Fich : RQ1C065UNTR.pdf

pwodwi ki gen rapò pou RQ1C065UNTR Rohm Semiconductor

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