FD200R12KE3HOSA1 - IGBT MODULE VCES 1200V 200A

Fabricant Nimewo Pati

FD200R12KE3HOSA1

Entèn Nimewo Pati

ABC-FD200R12KE3HOSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

IGBT MODULE VCES 1200V 200A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

50592 Pieces

referans pri

~~USD 47.069~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FD200R12KE3HOSA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FD200R12KE3HOSA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FD200R12KE3HOSA1

Fabricant : Infineon Technologies

Deskripsyon : IGBT MODULE VCES 1200V 200A

Seri : -

Estati Pati : Active

Kalite IGBT : Trench Field Stop

Nou konte genyen : Single Chopper

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : -

Pouvwa - Max : 1050W

Vce (sou) (Max) @ Vge, Ic : 2.15V @ 15V, 200A

Kouran - Cutoff Pèseptè (Max) : 5mA

Antre kapasite (Cies) @ Vce : 14nF @ 25V

Antre : Standard

NTC thermistor : No

Operating Tanperati : -40°C ~ 125°C

Mounting Kalite : Chassis Mount

Pake / Ka : Module

Pake Aparèy Founisè : Module

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD200 , FD200R12

dokiman pou FD200R12KE3HOSA1

Fich : FD200R12KE3HOSA1.pdf

pwodwi ki gen rapò pou FD200R12KE3HOSA1 Infineon Technologies

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