BUK9E1R6-30E,127 - MOSFET N-CH 30V 120A I2PAK

Fabricant Nimewo Pati

BUK9E1R6-30E,127

Entèn Nimewo Pati

ABC-BUK9E1R6-30E,127

Fabricant

NXP USA Inc.

Kout Deskripsyon

MOSFET N-CH 30V 120A I2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

45955 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen BUK9E1R6-30E,127 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BUK9E1R6-30E,127

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BUK9E1R6-30E,127

Fabricant : NXP USA Inc.

Deskripsyon : MOSFET N-CH 30V 120A I2PAK

Seri : TrenchMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 1.4 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 113nC @ 5V

Vgs (Max) : ±10V

Antre kapasite (Ciss) (Max) @ Vds : 16150pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 349W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BUK9E , BUK9E1R6

dokiman pou BUK9E1R6-30E,127

Fich : BUK9E1R6-30E,127.pdf

pwodwi ki gen rapò pou BUK9E1R6-30E,127 NXP USA Inc.

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