CMG06(TE12L,Q,M) - DIODE GEN PURP 600V 1A M-FLAT

Fabricant Nimewo Pati

CMG06(TE12L,Q,M)

Entèn Nimewo Pati

ABC-CMG06(TE12L,Q,M)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

DIODE GEN PURP 600V 1A M-FLAT

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6103951 Pieces

referans pri

~~USD 0.053625~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen CMG06(TE12L,Q,M) nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou CMG06(TE12L,Q,M)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : CMG06(TE12L,Q,M)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : DIODE GEN PURP 600V 1A M-FLAT

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 10µA @ 600V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : SOD-128

Pake Aparèy Founisè : M-FLAT (2.4x3.8)

Operating Tanperati - Junction : -40°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : CMG06 , CMG06(TE

dokiman pou CMG06(TE12L,Q,M)

Fich : CMG06(TE12L,Q,M).pdf

pwodwi ki gen rapò pou CMG06(TE12L,Q,M) Toshiba Semiconductor and Storage

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