FDC602P_F095 - MOSFET P-CH 20V 5.5A 6SSOT

Fabricant Nimewo Pati

FDC602P_F095

Entèn Nimewo Pati

ABC-FDC602P_F095

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 20V 5.5A 6SSOT

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

40188 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FDC602P_F095 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FDC602P_F095

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDC602P_F095

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 20V 5.5A 6SSOT

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 35 mOhm @ 5.5A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 4.5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 1456pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.6W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SuperSOT™-6

Pake / Ka : SOT-23-6 Thin, TSOT-23-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDC6 , FDC602

dokiman pou FDC602P_F095

Fich : FDC602P_F095.pdf

pwodwi ki gen rapò pou FDC602P_F095 ON Semiconductor

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