SIHB12N60E-GE3 - MOSFET N-CH 600V 12A TO263

Fabricant Nimewo Pati

SIHB12N60E-GE3

Entèn Nimewo Pati

ABC-SIHB12N60E-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 600V 12A TO263

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

287126 Pieces

referans pri

~~USD 1.14~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen SIHB12N60E-GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SIHB12N60E-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIHB12N60E-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 600V 12A TO263

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 380 mOhm @ 6A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 58nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 937pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 147W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D2PAK

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIHB , SIHB12N

dokiman pou SIHB12N60E-GE3

Fich : SIHB12N60E-GE3.pdf

pwodwi ki gen rapò pou SIHB12N60E-GE3 Vishay Siliconix

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