BAS316,H3F - DIODE GEN PURP 100V 250MA USC

Fabricant Nimewo Pati

BAS316,H3F

Entèn Nimewo Pati

ABC-BAS316,H3F

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

DIODE GEN PURP 100V 250MA USC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

21393792 Pieces

referans pri

~~USD 0.0153~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen BAS316,H3F nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BAS316,H3F

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BAS316,H3F

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : DIODE GEN PURP 100V 250MA USC

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 250mA

Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 150mA

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 3ns

Kouran - Fèy Reverse @ Vr : 200nA @ 80V

Kapasite @ Vr, F : 0.35pF @ 0V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : SC-76, SOD-323

Pake Aparèy Founisè : USC

Operating Tanperati - Junction : 150°C (Max)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BAS , BAS31

dokiman pou BAS316,H3F

Fich : BAS316,H3F.pdf

pwodwi ki gen rapò pou BAS316,H3F Toshiba Semiconductor and Storage

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