CTLDM8120-M621H TR - MOSFET P-CH 20V DFN6

Fabricant Nimewo Pati

CTLDM8120-M621H TR

Entèn Nimewo Pati

ABC-CTLDM8120-M621H TR

Fabricant

Central Semiconductor Corp

Kout Deskripsyon

MOSFET P-CH 20V DFN6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

44148 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen CTLDM8120-M621H TR nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou CTLDM8120-M621H TR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : CTLDM8120-M621H TR

Fabricant : Central Semiconductor Corp

Deskripsyon : MOSFET P-CH 20V DFN6

Seri : -

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 950mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 150 mOhm @ 950mA, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 3.56nC @ 4.5V

Vgs (Max) : 8V

Antre kapasite (Ciss) (Max) @ Vds : 200pF @ 16V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.6W (Ta)

Operating Tanperati : -65°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TLM621H

Pake / Ka : 6-XFDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : CTLDM8 , CTLDM8120

dokiman pou CTLDM8120-M621H TR

Fich : CTLDM8120-M621H TR.pdf

pwodwi ki gen rapò pou CTLDM8120-M621H TR Central Semiconductor Corp

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