DMN2013UFX-7 - MOSFET 2N-CH 20V 10A 6-DFN

Fabricant Nimewo Pati

DMN2013UFX-7

Entèn Nimewo Pati

ABC-DMN2013UFX-7

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET 2N-CH 20V 10A 6-DFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2083998 Pieces

referans pri

~~USD 0.157065~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen DMN2013UFX-7 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou DMN2013UFX-7

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMN2013UFX-7

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET 2N-CH 20V 10A 6-DFN

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual) Common Drain

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta)

RD sou (Max) @ Id, Vgs : 11.5 mOhm @ 8.5A, 4.5V

Vgs (th) (Max) @ Id : 1.1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 57.4nC @ 8V

Antre kapasite (Ciss) (Max) @ Vds : 2607pF @ 10V

Pouvwa - Max : 2.14W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 6-VFDFN Exposed Pad

Pake Aparèy Founisè : W-DFN5020-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMN2 , DMN201

dokiman pou DMN2013UFX-7

Fich : DMN2013UFX-7.pdf

pwodwi ki gen rapò pou DMN2013UFX-7 Diodes Incorporated

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