TK31J60W,S1VQ - MOSFET N CH 600V 30.8A TO-3PN

Fabricant Nimewo Pati

TK31J60W,S1VQ

Entèn Nimewo Pati

ABC-TK31J60W,S1VQ

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N CH 600V 30.8A TO-3PN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

88536 Pieces

referans pri

~~USD 4.225~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TK31J60W,S1VQ nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TK31J60W,S1VQ

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TK31J60W,S1VQ

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N CH 600V 30.8A TO-3PN

Seri : DTMOSIV

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30.8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 88 mOhm @ 15.4A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 1.5mA

Chaje Gate (Qg) (Max) @ Vgs : 86nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 3000pF @ 300V

Karakteristik FET : Super Junction

Disipasyon Pouvwa (Max) : 230W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-3P(N)

Pake / Ka : TO-3P-3, SC-65-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TK31 , TK31J6

dokiman pou TK31J60W,S1VQ

Fich : TK31J60W,S1VQ.pdf

pwodwi ki gen rapò pou TK31J60W,S1VQ Toshiba Semiconductor and Storage

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