APTM100A13DG - MOSFET 2N-CH 1000V 65A SP6

Fabricant Nimewo Pati

APTM100A13DG

Entèn Nimewo Pati

ABC-APTM100A13DG

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET 2N-CH 1000V 65A SP6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

30090 Pieces

referans pri

~~USD 79.04285~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen APTM100A13DG nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou APTM100A13DG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : APTM100A13DG

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET 2N-CH 1000V 65A SP6

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Half Bridge)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 1000V (1kV)

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 65A

RD sou (Max) @ Id, Vgs : 156 mOhm @ 32.5A, 10V

Vgs (th) (Max) @ Id : 5V @ 6mA

Chaje Gate (Qg) (Max) @ Vgs : 562nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 15200pF @ 25V

Pouvwa - Max : 1250W

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : SP6

Pake Aparèy Founisè : SP6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : APTM , APTM10

dokiman pou APTM100A13DG

Fich : APTM100A13DG.pdf

pwodwi ki gen rapò pou APTM100A13DG Microsemi Corporation

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