PHT11N06LT,135 - MOSFET N-CH 55V 4.9A SOT223

Fabricant Nimewo Pati

PHT11N06LT,135

Entèn Nimewo Pati

ABC-PHT11N06LT,135

Fabricant

NXP USA Inc.

Kout Deskripsyon

MOSFET N-CH 55V 4.9A SOT223

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

79821 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen PHT11N06LT,135 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PHT11N06LT,135

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PHT11N06LT,135

Fabricant : NXP USA Inc.

Deskripsyon : MOSFET N-CH 55V 4.9A SOT223

Seri : TrenchMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 55V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.9A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V

RD sou (Max) @ Id, Vgs : 40 mOhm @ 5A, 5V

Vgs (th) (Max) @ Id : 2V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 5V

Vgs (Max) : ±13V

Antre kapasite (Ciss) (Max) @ Vds : 1400pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.8W (Ta), 8.3W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-223

Pake / Ka : TO-261-4, TO-261AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PHT1 , PHT11N0

dokiman pou PHT11N06LT,135

Fich : PHT11N06LT,135.pdf

pwodwi ki gen rapò pou PHT11N06LT,135 NXP USA Inc.

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