PH8030L,115 - MOSFET N-CH 30V 76.7A LFPAK

Fabricant Nimewo Pati

PH8030L,115

Entèn Nimewo Pati

ABC-PH8030L,115

Fabricant

NXP USA Inc.

Kout Deskripsyon

MOSFET N-CH 30V 76.7A LFPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

45422 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen PH8030L,115 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PH8030L,115

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PH8030L,115

Fabricant : NXP USA Inc.

Deskripsyon : MOSFET N-CH 30V 76.7A LFPAK

Seri : TrenchMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 76.7A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 5.9 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 2.15V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 15.2nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2260pF @ 12V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 62.5W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : LFPAK56, Power-SO8

Pake / Ka : SC-100, SOT-669

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PH8 , PH803

dokiman pou PH8030L,115

Fich : PH8030L,115.pdf

pwodwi ki gen rapò pou PH8030L,115 NXP USA Inc.

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