TRS8E65C,S1Q - DIODE SCHOTTKY 650V 8A TO220-2L

Fabricant Nimewo Pati

TRS8E65C,S1Q

Entèn Nimewo Pati

ABC-TRS8E65C,S1Q

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

DIODE SCHOTTKY 650V 8A TO220-2L

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

99976 Pieces

referans pri

~~USD 3.7413~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TRS8E65C,S1Q nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TRS8E65C,S1Q

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TRS8E65C,S1Q

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : DIODE SCHOTTKY 650V 8A TO220-2L

Seri : -

Estati Pati : Active

Kalite dyòd : Silicon Carbide Schottky

Voltage - DC Ranvèse (Vr) (Max) : 650V

Kouran - Mwayèn Rèktifye (Io) : 8A (DC)

Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 8A

Vitès : No Recovery Time > 500mA (Io)

Ranvèse Tan Reverse (trr) : 0ns

Kouran - Fèy Reverse @ Vr : 90µA @ 650V

Kapasite @ Vr, F : 44pF @ 650V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : TO-220-2

Pake Aparèy Founisè : TO-220-2L

Operating Tanperati - Junction : 175°C (Max)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TRS8 , TRS8E6

dokiman pou TRS8E65C,S1Q

Fich : TRS8E65C,S1Q.pdf

pwodwi ki gen rapò pou TRS8E65C,S1Q Toshiba Semiconductor and Storage

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