PHD38N02LT,118 - MOSFET N-CH 20V 44.7A DPAK

Fabricant Nimewo Pati

PHD38N02LT,118

Entèn Nimewo Pati

ABC-PHD38N02LT,118

Fabricant

Nexperia USA Inc.

Kout Deskripsyon

MOSFET N-CH 20V 44.7A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3178371 Pieces

referans pri

~~USD 0.102985~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen PHD38N02LT,118 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PHD38N02LT,118

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PHD38N02LT,118

Fabricant : Nexperia USA Inc.

Deskripsyon : MOSFET N-CH 20V 44.7A DPAK

Seri : TrenchMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 44.7A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V

RD sou (Max) @ Id, Vgs : 16 mOhm @ 25A, 5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15.1nC @ 5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 20V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 57.6W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DPAK

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PHD3 , PHD38N0

dokiman pou PHD38N02LT,118

Fich : PHD38N02LT,118.pdf

pwodwi ki gen rapò pou PHD38N02LT,118 Nexperia USA Inc.

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