STGW80H65DFB-4 - IGBT BIPO 650V 80A TO247

Fabricant Nimewo Pati

STGW80H65DFB-4

Entèn Nimewo Pati

ABC-STGW80H65DFB-4

Fabricant

STMicroelectronics

Kout Deskripsyon

IGBT BIPO 650V 80A TO247

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

84726 Pieces

referans pri

~~USD 4.96625~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen STGW80H65DFB-4 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou STGW80H65DFB-4

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STGW80H65DFB-4

Fabricant : STMicroelectronics

Deskripsyon : IGBT BIPO 650V 80A TO247

Seri : -

Estati Pati : Active

Kalite IGBT : Trench Field Stop

Voltage - Pèseptè ki emèt deba (Max) : 650V

Kouran - Pèseptè (Ic) (Max) : 120A

Kouran - Pèseptè batman (Icm) : 240A

Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 80A

Pouvwa - Max : 469W

Oblije chanje enèji : 2.1mJ (on), 1.5mJ (off)

Kalite Antre : Standard

Gate chaje : 414nC

Td (on / off) @ 25 ° C : 84ns/280ns

Kondisyon egzamen an : 400V, 80A, 10 Ohm, 15V

Ranvèse Tan Reverse (trr) : 85ns

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake / Ka : TO-247-4

Pake Aparèy Founisè : TO-247-4L

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STGW , STGW80H

dokiman pou STGW80H65DFB-4

Fich : STGW80H65DFB-4.pdf

pwodwi ki gen rapò pou STGW80H65DFB-4 STMicroelectronics

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