BSM180D12P3C007 - SIC POWER MODULE

Fabricant Nimewo Pati

BSM180D12P3C007

Entèn Nimewo Pati

ABC-BSM180D12P3C007

Fabricant

Rohm Semiconductor

Kout Deskripsyon

SIC POWER MODULE

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

59097 Pieces

referans pri

~~USD 262.855~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen BSM180D12P3C007 nan stock pou vann.

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Espesifikasyon pou BSM180D12P3C007

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSM180D12P3C007

Fabricant : Rohm Semiconductor

Deskripsyon : SIC POWER MODULE

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Silicon Carbide (SiC)

Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180A (Tc)

RD sou (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 5.6V @ 50mA

Chaje Gate (Qg) (Max) @ Vgs : -

Antre kapasite (Ciss) (Max) @ Vds : 900pF @ 10V

Pouvwa - Max : 880W

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : Module

Pake Aparèy Founisè : Module

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSM18 , BSM180D

dokiman pou BSM180D12P3C007

Fich : BSM180D12P3C007.pdf

pwodwi ki gen rapò pou BSM180D12P3C007 Rohm Semiconductor

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