TP65H050WS - GANFET N-CH 650V 34A TO247-3

Fabricant Nimewo Pati

TP65H050WS

Entèn Nimewo Pati

ABC-TP65H050WS

Fabricant

Transphorm

Kout Deskripsyon

GANFET N-CH 650V 34A TO247-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

75075 Pieces

referans pri

~~USD 8.095~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TP65H050WS nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TP65H050WS

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TP65H050WS

Fabricant : Transphorm

Deskripsyon : GANFET N-CH 650V 34A TO247-3

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : GaNFET (Gallium Nitride)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 34A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 12V

RD sou (Max) @ Id, Vgs : 60 mOhm @ 22A, 10V

Vgs (th) (Max) @ Id : 4.8V @ 700µA

Chaje Gate (Qg) (Max) @ Vgs : 24nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1000pF @ 400V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 119W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247-3

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TP6 , TP65H

dokiman pou TP65H050WS

Fich : TP65H050WS.pdf

pwodwi ki gen rapò pou TP65H050WS Transphorm

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