TPN1600ANH,L1Q - MOSFET N CH 100V 17A 8TSON-ADV

Fabricant Nimewo Pati

TPN1600ANH,L1Q

Entèn Nimewo Pati

ABC-TPN1600ANH,L1Q

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N CH 100V 17A 8TSON-ADV

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3117366 Pieces

referans pri

~~USD 0.105~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen TPN1600ANH,L1Q nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TPN1600ANH,L1Q

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPN1600ANH,L1Q

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N CH 100V 17A 8TSON-ADV

Seri : U-MOSVIII-H

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 16 mOhm @ 8.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 200µA

Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1600pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta), 42W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPN1 , TPN1600

dokiman pou TPN1600ANH,L1Q

Fich : TPN1600ANH,L1Q.pdf

pwodwi ki gen rapò pou TPN1600ANH,L1Q Toshiba Semiconductor and Storage

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