BTS282Z E3230 - MOSFET N-CH 49V 80A TO220-7

Fabricant Nimewo Pati

BTS282Z E3230

Entèn Nimewo Pati

ABC-BTS282Z E3230

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 49V 80A TO220-7

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

59036 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen BTS282Z E3230 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BTS282Z E3230

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BTS282Z E3230

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 49V 80A TO220-7

Seri : TEMPFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 49V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 6.5 mOhm @ 36A, 10V

Vgs (th) (Max) @ Id : 2V @ 240µA

Chaje Gate (Qg) (Max) @ Vgs : 232nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4800pF @ 25V

Karakteristik FET : Temperature Sensing Diode

Disipasyon Pouvwa (Max) : 300W (Tc)

Operating Tanperati : -40°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : P-TO220-7-230

Pake / Ka : TO-220-7

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BTS2 , BTS282

dokiman pou BTS282Z E3230

Fich : BTS282Z E3230.pdf

pwodwi ki gen rapò pou BTS282Z E3230 Infineon Technologies

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